#Pin stack 3ds max update
In late 2018, JEDEC announced an update to the HBM2 specification, providing for increased bandwidth and capacities. The HBM2 interposer of a Radeon RX Vega 64 GPU, with removed HBM dies the GPU is still in place SK Hynix also announced availability of 4 GB stacks in August 2016. On January 19, 2016, Samsung announced early mass production of HBM2, at up to 8 GB per stack. HBM2 is predicted to be especially useful for performance-sensitive consumer applications such as virtual reality. The HBM2 spec allows up to 8 GB per package. Retaining 1024‑bit wide access, HBM2 is able to reach 256 GB/s memory bandwidth per package. The second generation of High Bandwidth Memory, HBM2, also specifies up to eight dies per stack and doubles pin transfer rates up to 2 GT/s.
HBM supports transfer rates of 1 GT/s per pin (transferring 1 bit), yielding an overall package bandwidth of 128 GB/s. Each channel interface maintains a 128‑bit data bus operating at double data rate (DDR). Commands are registered at the rising edge of CK_t, CK_c. The HBM DRAM uses a 500 MHz differential clock CK_t / CK_c (where the suffix "_t" denotes the "true", or "positive", component of the differential pair, and "_c" stands for the "complementary" one). The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The channels are completely independent of one another and are not necessarily synchronous to each other. The interface is divided into independent channels. The HBM DRAM is tightly coupled to the host compute die with a distributed interface. HBM memory on an AMD Radeon R9 Nano graphics card's GPU package However, as semiconductor device fabrication is significantly more expensive than printed circuit board manufacture, this adds cost to the final product. This interposer has the added advantage of requiring the memory and processor to be physically close, decreasing memory paths. AMD and Nvidia have both used purpose-built silicon chips, called interposers, to connect the memory and GPU. The larger number of connections to the memory, relative to DDR4 or GDDR5, required a new method of connecting the HBM memory to the GPU (or other processor). In comparison, the bus width of GDDR memories is 32 bits, with 16 channels for a graphics card with a 512‑bit memory interface. A graphics card/GPU with four 4‑Hi HBM stacks would therefore have a memory bus with a width of 4096 bits. An HBM stack of four DRAM dies (4‑Hi) has two 128‑bit channels per die for a total of 8 channels and a width of 1024 bits in total. HBM memory bus is very wide in comparison to other DRAM memories such as DDR4 or GDDR5.
The HBM technology is similar in principle but incompatible with the Hybrid Memory Cube (HMC) interface developed by Micron Technology. Within the stack the die are vertically interconnected by through-silicon vias (TSVs) and microbumps. Alternatively, the memory die could be stacked directly on the CPU or GPU chip. The stack is often connected to the memory controller on a GPU or CPU through a substrate, such as a silicon interposer. This is achieved by stacking up to eight DRAM dies and an optional base die which can include buffer circuitry and test logic. HBM achieves higher bandwidth while using less power in a substantially smaller form factor than DDR4 or GDDR5. The second generation, HBM2, was accepted by JEDEC in January 2016. High Bandwidth Memory has been adopted by JEDEC as an industry standard in October 2013. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015. It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs and FPGAs and in some supercomputers (such as the NEC SX-Aurora TSUBASA and Fujitsu A64FX). High Bandwidth Memory ( HBM) is a high-speed computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.
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